深圳市辰睿半导体有限公司

1 FEATURES GD25WQ32ESIG
◆ 32M-bit Serial Flash ◆ Fast Program/Erase Speed
 - 4096K-Byte - Page Program time: 1ms typical
 - 256 Bytes per programmable page - Sector Erase time: 100ms typical
 - Block Erase time: 0.3s/0.5s typical  GD25WQ32ESIG 
◆ Standard, Dual, Quad SPI - Chip Erase time: 25s typical
 - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
 - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# ◆ Flexible Architecture
 - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 - Uniform Sector of 4K-Byte
 - Uniform Block of 32/64K-Byte
◆ High Speed Clock Frequency  GD25WQ32ESIG
 - 104MHz for fast read with 30PF load ◆ Low Power Consumption
 - Dual I/O Data transfer up to 208Mbits/s - 12μA typical standby current
 - Quad I/O Data transfer up to 416Mbits/s - 0.1μA typical deep power down current
◆ Software/Hardware Write Protection ◆ Advanced Security Features
 - Write protect all/portion of memory via software - 128-bit Unique ID for each device
 - Enable/Disable protection with WP# Pin - Serial Flash Discoverable parameters (SFDP) register
 - Top/Bottom Block protection - 3x1024-Byte Security Registers With OTP Locks
◆ Endurance and Data Retention ◆ Single Power Supply Voltage
 - Minimum 100,000 Program/Erase Cycles - Full voltage range: 1.65-3.6V
 - 20-year data retention typical
◆ Package Information  GD25WQ32ESIG
◆ Allows XiP (eXecute in Place) Operation - SOP8 150mil
 - High speed Read reduce overall XiP instruction fetch time - SOP8 208mil
 - Continuous Read with Wrap further reduce data latency to - USON8 (3x2mm, 0.45mm thickness)
 fill up SoC cache - USON8 (3x4mm)